Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO-=SUB=-2-=/SUB=-(Y) on Si(001) substrates with Ge nanoislands

The effect of optical radiation in the visible and near-infrared bands on resistive switching a MOS stack based ZrO 2 (Y) film an n-Si(001) substrate with self-assembled Ge nanoislands its surface has been studied. An increase logical gap was observed upon photoexcitation, particular, when photon energies were smaller than Si band gap. associated impact photo-emf at Si/Ge/ZrO interface. In latter case, is spatially indirect interband transitions nanoislands. Keywords:: memristor, photo-induced switching, yttria-stabilized zirconia, MIS-structure, Ge/Si